| PART |
Description |
Maker |
| 2FAL-M16R |
Integrated Passive & Active Devices
|
BOURNS[Bourns Electronic Solutions]
|
| 2FAG-M12R |
Integrated Passive & Active Devices
|
Bourns, Inc.
|
| MUR7060R |
High Power Super Fast Recovery Rectifiers - DO5 Stud Devices
|
America Semiconductor
|
| LT1U97A |
1608 Size, Super Thin Type(0.6mm), Leadless Chip LED Devices
|
SHARP[Sharp Electrionic Components]
|
| KB-H100SRW |
The Super Bright Red source color devices SINGLE COLOR LED, SUPER BRIGHT RED, 19.05 mm
|
Kingbright, Corp.
Kingbright Corporation.
KINGBRIGHT[Kingbright Corporation]
Kingbright Electronic
|
| VT82C686A |
PCI SUPER-I/O INTEGRATED PERIPHERAL CONTROLLER
|
VIA Technologies
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HCPL0600 HCPL0601 HCPL0611 HCPL0637 HCPL0638 HCPL0 |
The HCPL06XX optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output (single channel devices).
|
Fairchild Semiconductor
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
|
